Rapid Selective Annealing of Cu Thin Films on Si Using Microwaves

Brain, R. A.; Atwater, H. A.; Watson, T. J.; Barmatz, M.

dc.contributor.author	Brain, R. A.	en_US
dc.contributor.author	Atwater, H. A.	en_US
dc.contributor.author	Watson, T. J.	en_US
dc.contributor.author	Barmatz, M.	en_US
dc.date.accessioned	2004-10-05T21:51:30Z
dc.date.available	2004-10-05T21:51:30Z
dc.date.issued	1994--April	en_US
dc.identifier.citation	San Francisco, California, USA	en_US
dc.identifier.clearanceno	94-0567	en_US
dc.identifier.uri	http://hdl.handle.net/2014/33836
dc.description.abstract	A major goal of the semiconductor indurstry is to lower the processing temperatures needed for interconnects in silicon integrated circuits. Typical rapid thermal annealing processes heat the film as well as the substrate, creating device problems.	en_US
dc.format.extent	206788 bytes
dc.format.mimetype	application/pdf
dc.language.iso	en_US
dc.subject.other	silicon integrated circuits microwave thin films	en_US
dc.title	Rapid Selective Annealing of Cu Thin Films on Si Using Microwaves	en_US