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Rapid Selective Annealing of Cu Thin Films on Si Using Microwaves

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dc.contributor.author Brain, R. A. en_US
dc.contributor.author Atwater, H. A. en_US
dc.contributor.author Watson, T. J. en_US
dc.contributor.author Barmatz, M. en_US
dc.date.accessioned 2004-10-05T21:51:30Z
dc.date.available 2004-10-05T21:51:30Z
dc.date.issued 1994--April en_US
dc.identifier.citation San Francisco, California, USA en_US
dc.identifier.clearanceno 94-0567 en_US
dc.identifier.uri http://hdl.handle.net/2014/33836
dc.description.abstract A major goal of the semiconductor indurstry is to lower the processing temperatures needed for interconnects in silicon integrated circuits. Typical rapid thermal annealing processes heat the film as well as the substrate, creating device problems. en_US
dc.format.extent 206788 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other silicon integrated circuits microwave thin films en_US
dc.title Rapid Selective Annealing of Cu Thin Films on Si Using Microwaves en_US


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