Rapid Selective Annealing of Cu Thin Films on Si Using Microwaves

Brain, R. A.; Atwater, H. A.; Watson, T. J.; Barmatz, M.

The JPL Technical Report Server is migrating to the JPL Open Repository in January 2023. Please update bookmarks to https://jor.jpl.nasa.gov/ for external access and https://jori.jpl.nasa.gov for internal access.

Rapid Selective Annealing of Cu Thin Films on Si Using Microwaves

Brain, R. A.; Atwater, H. A.; Watson, T. J.; Barmatz, M.

URI: http://hdl.handle.net/2014/33836

Date: 1994--Apri

Citation: San Francisco, California, USA

Abstract:

A major goal of the semiconductor indurstry is to lower the processing temperatures needed for interconnects in silicon integrated circuits. Typical rapid thermal annealing processes heat the film as well as the substrate, creating device problems.

Show full item record