JPL Technical Report Server

Browsing JPL TRS 1992+ by Subject "GaAs devices degradation gate metallization structures"

Browsing JPL TRS 1992+ by Subject "GaAs devices degradation gate metallization structures"

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  • Kayali, Sammy (1996-04-28)
    It has been observed that GaAs devices mounted in hermetically sealed packages, and exposed to burn-in and lifetest temperatures as low as 125 C, exhibit performance degradation in both RF and DC characteristics after ...

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