Yui, C.; Swift, G.; Fabula, J.; Carmichael, C.
(2002-09-10)
The XQR18V04 was evaluated for single event upset rates using proton and heavy ions. The PROM was demonstrated to be immune to latch-up, as well as to static upset in the flash memory cells, to an LET > 125 MeV/mg/cmz ...