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Fluorine Implantation and Residual Stresses in Polysilicon Films

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dc.contributor.author Lowery, Lynn en_US
dc.contributor.author Zschack, Paul en_US
dc.contributor.author Angelis, Robert De en_US
dc.date.accessioned 2004-10-05T06:25:13Z
dc.date.available 2004-10-05T06:25:13Z
dc.date.issued 1994-08-05 en_US
dc.identifier.citation Denver, CO en_US
dc.identifier.clearanceno 94-1326 en_US
dc.identifier.uri http://hdl.handle.net/2014/33545
dc.description.abstract As microelectronic device dimensions are reduced below one micron, the hot carrier effect is a major barrier to continued scaling and VLSI reliability. Several reports have shown that fluorine diffusion into the device gate greatly enhances the resistance to hot carriers. There has been some disagreement as to the mechanism of influence; however, several reports have suggested that the polysilicon is physically modified by the fluorine implant and that the beneficial effects are at least in part due to stress relaxation in the polysilicon. en_US
dc.format.extent 238363 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other polysilicon fluorine microelectronic devices hot carrier effect scaling VLSI stress relaxation en_US
dc.title Fluorine Implantation and Residual Stresses in Polysilicon Films en_US


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