Fluorine Implantation and Residual Stresses in Polysilicon Films

Lowery, Lynn; Zschack, Paul; Angelis, Robert De

dc.contributor.author	Lowery, Lynn	en_US
dc.contributor.author	Zschack, Paul	en_US
dc.contributor.author	Angelis, Robert De	en_US
dc.date.accessioned	2004-10-05T06:25:13Z
dc.date.available	2004-10-05T06:25:13Z
dc.date.issued	1994-08-05	en_US
dc.identifier.citation	Denver, CO	en_US
dc.identifier.clearanceno	94-1326	en_US
dc.identifier.uri	http://hdl.handle.net/2014/33545
dc.description.abstract	As microelectronic device dimensions are reduced below one micron, the hot carrier effect is a major barrier to continued scaling and VLSI reliability. Several reports have shown that fluorine diffusion into the device gate greatly enhances the resistance to hot carriers. There has been some disagreement as to the mechanism of influence; however, several reports have suggested that the polysilicon is physically modified by the fluorine implant and that the beneficial effects are at least in part due to stress relaxation in the polysilicon.	en_US
dc.format.extent	238363 bytes
dc.format.mimetype	application/pdf
dc.language.iso	en_US
dc.subject.other	polysilicon fluorine microelectronic devices hot carrier effect scaling VLSI stress relaxation	en_US
dc.title	Fluorine Implantation and Residual Stresses in Polysilicon Films	en_US