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(abstract) PV Technology for Low Intensity, Low Temperature (LILT) Applications

Show simple item record Stella, Paul M. en_US Pool, Frederick S. en_US Nicolet, Marc A. en_US Iles, Peter A. en_US 2004-10-05T06:22:14Z 2004-10-05T06:22:14Z 1994-12-05 en_US
dc.identifier.citation Waikoloa, Hawaii en_US
dc.identifier.clearanceno 94-1374 en_US
dc.description.abstract As a result of the recent NASA emphasis on smaller, lower cost space missions, PV is now being considered for a number of missions operating at solar distances of 3 AU or greater. In the past, many of these missions would utilize an RTG (radioisotope thermoelectric generator). Historically, silicon solar cell behavior at these distances has been compromised by a number of mechanisms including shunting, nonohmic back contacts, and the "broken knee" curve shape. The former two can usually be neglected for modern silicon cells, but the latter has not been eliminated. This problem has been identified with localized diffusion at the top contact/silicon interface which leads to structural changes at the local junction. This is believed to create a resistive metal-semiconductor-like (MSL) interface in parallel with the junction which results in the characteristic forms of the LILT (low intensity, low temperature) "broken knee". This paper discusses a TaSiN contact barrier that will prevent the MSL structure in the junction. en_US
dc.format.extent 79226 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other solar cells photovoltaic PV semiconductor silicon broken knee space missions spacecraft power LILT low temperature low intensity RTGs en_US
dc.title (abstract) PV Technology for Low Intensity, Low Temperature (LILT) Applications en_US

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