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Using High Temperature Electrical Resistivity Measurements to Determine the Quality of Diamond Films

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dc.contributor.author Vandersande, J. en_US
dc.contributor.author Zoltan, L. en_US
dc.date.accessioned 2004-10-05T05:50:12Z
dc.date.available 2004-10-05T05:50:12Z
dc.date.issued 1994-09-25 en_US
dc.identifier.citation Diamond and Related Materials en_US
dc.identifier.citation Lucca, Italy en_US
dc.identifier.clearanceno 94-1292 en_US
dc.identifier.uri http://hdl.handle.net/2014/33351
dc.description.abstract The electrical resistivity of undoped diamond films has been measured between room temperature and 1200 C. en_US
dc.format.extent 487356 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other microwave plasma raman spectra diamond films high temperature electrical resistivity en_US
dc.title Using High Temperature Electrical Resistivity Measurements to Determine the Quality of Diamond Films en_US


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