Observations of Single Event Failure in Power MOSFETS

Nichols, D.; McCarty, K.; Coss, J.

dc.contributor.author	Nichols, D.	en_US
dc.contributor.author	McCarty, K.	en_US
dc.contributor.author	Coss, J.	en_US
dc.date.accessioned	2004-10-05T05:12:19Z
dc.date.available	2004-10-05T05:12:19Z
dc.date.issued	1994-07-19	en_US
dc.identifier.citation	Tucson, Arizona, USA	en_US
dc.identifier.clearanceno	94-1051	en_US
dc.identifier.uri	http://hdl.handle.net/2014/33117
dc.description.abstract	The first compendium of single event test data for power MOSFETs provides failure thresholds from burnout or gate rupture for over 100 devices of eight manufacturers. Ordering the data has also provided some useful insights.	en_US
dc.format.extent	909606 bytes
dc.format.mimetype	application/pdf
dc.language.iso	en_US
dc.subject.other	bipolar power transistors single event test burnout or gate rupture	en_US
dc.title	Observations of Single Event Failure in Power MOSFETS	en_US