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Observations of Single Event Failure in Power MOSFETS

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dc.contributor.author Nichols, D. en_US
dc.contributor.author McCarty, K. en_US
dc.contributor.author Coss, J. en_US
dc.date.accessioned 2004-10-05T05:12:19Z
dc.date.available 2004-10-05T05:12:19Z
dc.date.issued 1994-07-19 en_US
dc.identifier.citation Tucson, Arizona, USA en_US
dc.identifier.clearanceno 94-1051 en_US
dc.identifier.uri http://hdl.handle.net/2014/33117
dc.description.abstract The first compendium of single event test data for power MOSFETs provides failure thresholds from burnout or gate rupture for over 100 devices of eight manufacturers. Ordering the data has also provided some useful insights. en_US
dc.format.extent 909606 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other bipolar power transistors single event test burnout or gate rupture en_US
dc.title Observations of Single Event Failure in Power MOSFETS en_US


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