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Progress in CMOS Active Pixel Image Sensors

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dc.contributor.author Mendis, S. en_US
dc.contributor.author Kemeny, S. en_US
dc.contributor.author Gee, R. en_US
dc.contributor.author Pain, B. en_US
dc.contributor.author Kim, Q. en_US
dc.contributor.author Fossum, E. en_US
dc.date.accessioned 2004-10-04T22:59:25Z
dc.date.available 2004-10-04T22:59:25Z
dc.date.issued 1994-02-07 en_US
dc.identifier.citation San Jose, California, USA en_US
dc.identifier.clearanceno 94-0315 en_US
dc.identifier.uri http://hdl.handle.net/2014/32570
dc.description.abstract Recent research results regarding the investigation of CMOS active pixel image sensors (APS) are reported. An investigation of various designs for the pixel, including photogate devices of various geometries and photodiode devices has been performed. Opto-electronic performance including intra-pixel photoresponse maps taken using a focused laser scanning apparatus are presented. Several imaging arrays have also been investigated. A 128 x 128 image sensor has been fabricated and characterized. Both p-well and n-well implementations have been explored. The demonstrated arrays use 2 micron CMOS design rules and have a 40 x 40 micron pixel pitch. en_US
dc.format.extent 1185925 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other active pixel image sensors APS CMOS en_US
dc.title Progress in CMOS Active Pixel Image Sensors en_US


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