Very Long-Wavelength GaAs/AlxGa1-xAs Infrared Hot Electron Transistor

Gunapala, S. D.; Park, J. C.; Lin, T. L.; Liu, J. K.; Bandara, K. M. S. V.

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Very Long-Wavelength GaAs/AlxGa1-xAs Infrared Hot Electron Transistor

Gunapala, S. D.; Park, J. C.; Lin, T. L.; Liu, J. K.; Bandara, K. M. S. V.

URI: http://hdl.handle.net/2014/32454

Date: 1994

Abstract:

We have demonstrated a bound to continuum state GaAs/AlxGa1-xAs infrared hot electron transistor which has a peak response at <sub>=16.3</sub>. This device utilizes a bound-to-continuum quantum well infrared photodetector as a photosensitive emitter and a wide AlxGa1-xAs barrier between the base and the collector as an energy discriminating filter.

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