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High Performance InGaAs/GaAs Quantum Well Infrared Photodetectors

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dc.contributor.author Gunapala, S. D. en_US
dc.contributor.author Bandara, K. M. S. V. en_US
dc.contributor.author Levine, B. F. en_US
dc.contributor.author Park, J. S. en_US
dc.contributor.author Lin, T. L. en_US
dc.contributor.author Pike, W. T. en_US
dc.contributor.author Liu, J. K. en_US
dc.date.accessioned 2004-10-04T22:38:16Z
dc.date.available 2004-10-04T22:38:16Z
dc.date.issued 1994
dc.identifier.clearanceno 94-0194
dc.identifier.uri http://hdl.handle.net/2014/32453
dc.description.abstract By increasing the quantum well barrier width, incorporating spacer layers between the contacts and the multi quantum well region, and optimizing the materials growth parameters, we have dramatically reduced the dark current by many orders of magnitude and thereby significantly increased the detectivity. en_US
dc.format.extent 361442 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other spacer layers quantum well region dark current wavelength en_US
dc.title High Performance InGaAs/GaAs Quantum Well Infrared Photodetectors en_US


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