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High Performance InGaAs/GaAs Quantum Well Infrared Photodetectors

Show simple item record Gunapala, S. D. en_US Bandara, K. M. S. V. en_US Levine, B. F. en_US Park, J. S. en_US Lin, T. L. en_US Pike, W. T. en_US Liu, J. K. en_US 2004-10-04T22:38:16Z 2004-10-04T22:38:16Z 1994
dc.identifier.clearanceno 94-0194
dc.description.abstract By increasing the quantum well barrier width, incorporating spacer layers between the contacts and the multi quantum well region, and optimizing the materials growth parameters, we have dramatically reduced the dark current by many orders of magnitude and thereby significantly increased the detectivity. en_US
dc.format.extent 361442 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other spacer layers quantum well region dark current wavelength en_US
dc.title High Performance InGaAs/GaAs Quantum Well Infrared Photodetectors en_US

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