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Applications of Silicon Carbide for High Temperature Electronics and Sensors

Show simple item record Shields, Virgil B. en_US 2004-10-03T06:16:31Z 2004-10-03T06:16:31Z 1995-10 en_US
dc.identifier.citation Phoenix, Arizona en_US
dc.identifier.clearanceno 95-1287 en_US
dc.description.abstract Silicon carbide (SiC) is a wide bandgap material that shows great promise in high-power and high temperature electronics applications because of its high thermal conductivity and high breakdown electrical field. The excellent physical and electronic properties of SiC allows the fabrication of devices that can operate at higher temperatures and power levels than devices produced from either silicon or GaAs. Although modern electronics depends primarily upon silicon based devices, this material is not capable of handling may special requirements. Devices which operate at high speeds, at high power levels and are to be used in extreme environments at high temperatures and high radiation levels need other materials with wider bandgaps than that of silicon. Many space and terrestrial applications also have a requirement for wide bandgap materials. SiC also has great potential for high power and frequency operation due to a high saturated drift velocity. The wide bandgap allows for unique optoelectronic applications, that include blue light emitting diodes and ultraviolet photodetectors. New areas involving gas sensing and telecommunications offer significant promise. Overall, the properties of SiC make it one of the best prospects for extending the capabilities and operational regimes of the current semiconductor device technology. en_US
dc.format.extent 222709 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other Silicon Carbide en_US
dc.title Applications of Silicon Carbide for High Temperature Electronics and Sensors en_US

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