Abstract:
We have developed a first generation 15 歠GaAs/AlGaAs 128x128 quantum well infrared photodetectors (QWIPSs) focal plane array (FPA) for a staring infrared (IR) sensor system. The photoconductive QWIPs of the 128x128 FPAs were then fabricated by wet chemical etching through the photosensitive GaAs/AlGaAs multi quantum well layers into the 1 歠thick doped GaAs contact layer. The pitch of the FPA is 50 m and the actual pixel size is 38x38m2.