GaAs Infrared Detectors

Gunapala, S. D.; Bandara, S. V.

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GaAs Infrared Detectors

Gunapala, S. D.; Bandara, S. V.

URI: http://hdl.handle.net/2014/26423

Date: 1996

Abstract:

It is customary to make infrared (IR) detectors in the long wavelength range (8-20 µm) by utilizing the interband transition which promotes an electron across the band gap (E<sub>g</sub>) from the valence band to the conduction. These photo-electrons can be collected efficiently, thereby producing a photocurrent in the external circuit.

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