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Nitrogen Plasma Instabilities and the Growth of Silicon Nitride by Electron Cyclotron Resonance Microwave Plasma Chemical Vapor Deposition

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dc.contributor.author Pool, F. S. en_US
dc.date.accessioned 2004-09-30T06:15:37Z
dc.date.available 2004-09-30T06:15:37Z
dc.date.issued 1996 en_US
dc.identifier.clearanceno 96-0828 en_US
dc.identifier.uri http://hdl.handle.net/2014/25426
dc.description.abstract Nitrogen plasma instabilities have been identified through fluctuations in the ion current density and substrate floating potential. The plasma characteristics for both nitrogen and silane-nitrogen plasmas are consistent with a transition from an underdense to overdense plasma at 0.9 and 1.0 mTorr respectively. en_US
dc.format.extent 394259 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other nitrogen plasma instabilities ion current density substrate floating potential plasma intensity en_US
dc.title Nitrogen Plasma Instabilities and the Growth of Silicon Nitride by Electron Cyclotron Resonance Microwave Plasma Chemical Vapor Deposition en_US


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