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Non-Destructive Measurements for CMOS Devices Using Charge Collection Techniques

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dc.contributor.author Edmonds, Larry en_US
dc.contributor.author Swift, Gary en_US
dc.contributor.author Johnston, Allan en_US
dc.date.accessioned 2004-09-30T03:33:16Z
dc.date.available 2004-09-30T03:33:16Z
dc.date.issued 1996-07-15 en_US
dc.identifier.citation Indian Wells, California, USA en_US
dc.identifier.clearanceno 96-0347 en_US
dc.identifier.uri http://hdl.handle.net/2014/24324
dc.format.extent 372455 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other device overlayer epi thickness diffusion lengthCMOS RAM charge collection spectroscopy en_US
dc.title Non-Destructive Measurements for CMOS Devices Using Charge Collection Techniques en_US


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