JPL Technical Report Server

Readout Characteristics of Integrated Monolithic InGaAs Active Pixel Sensor Array

Show simple item record

dc.contributor.author Kim, Q. en_US
dc.contributor.author Cunningham, T. J. en_US
dc.contributor.author Pain, B. en_US
dc.contributor.author Lange, M. J. en_US
dc.contributor.author Olsen, G. H. en_US
dc.date.accessioned 2004-09-27T17:29:30Z
dc.date.available 2004-09-27T17:29:30Z
dc.date.issued 1998-01-24 en_US
dc.identifier.citation San Jose, California, USA en_US
dc.identifier.clearanceno 97-1422 en_US
dc.identifier.uri http://hdl.handle.net/2014/22884
dc.description.abstract A newly fabricated Monolithic InGaAs Active Pixel Image Sensor is presented, and its readout characteristics are described. en_US
dc.format.extent 581302 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other Readout circuits Dual (Visible/IR) responses Monolithic Active pixel sensor en_US
dc.title Readout Characteristics of Integrated Monolithic InGaAs Active Pixel Sensor Array en_US


Files in this item

This item appears in the following Collection(s)

Show simple item record

Search


Browse

My Account