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Fabrication and Characterization of 640x486 GaAs Based Quantum Well Infrared Photodetector (QWIP) Snapshot Camera

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dc.contributor.author Gunapala, S. D. en_US
dc.contributor.author Bandara, S. V. en_US
dc.contributor.author Liu, J. K. en_US
dc.contributor.author Hong, W. en_US
dc.contributor.author Sundaram, M. en_US
dc.contributor.author Carralejo, R. en_US
dc.contributor.author Shott, C. A. en_US
dc.contributor.author Maker, P. D. en_US
dc.contributor.author Miller, R. E. en_US
dc.date.accessioned 2004-09-26T01:14:05Z
dc.date.available 2004-09-26T01:14:05Z
dc.date.issued 1997-08-31 en_US
dc.identifier.citation Paris, France en_US
dc.identifier.clearanceno 97-0949 en_US
dc.identifier.uri http://hdl.handle.net/2014/22458
dc.description.abstract In this paper, we discuss the development of this very sensitive long wavelength infrared (LWIR) camera based on a GaAs/AlGaAs QWIP focal plane array (FPA) and its performance in quantum efficiency, NE**T, uniformity, and operability. en_US
dc.format.extent 795081 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other Intersubband Transitions Infrared (IR) Long-wavelength Infrared (LWIR) Gallium Arsenide (GaAs) Quantum Well Infrared Photodectector (QWIP) Focal Plane Arrays Noise Equivalent Temperature Difference Infrared Imaging Cameras en_US
dc.title Fabrication and Characterization of 640x486 GaAs Based Quantum Well Infrared Photodetector (QWIP) Snapshot Camera en_US


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