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Device See Susceptibility From Heavy Ions (1995-1996)

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dc.contributor.author Nichols, D. K. en_US
dc.contributor.author Coss, J. R. en_US
dc.contributor.author Miyahira, T. F. en_US
dc.contributor.author Schwartz, H. R. en_US
dc.contributor.author Swift, G. M. en_US
dc.contributor.author Koga, R. en_US
dc.contributor.author Crain, W. R. en_US
dc.contributor.author Crawford, K. B. en_US
dc.contributor.author Penzin, S. H. en_US
dc.date.accessioned 2004-09-26T01:04:24Z
dc.date.available 2004-09-26T01:04:24Z
dc.date.issued 1997-07-21 en_US
dc.identifier.citation Snowmass, Colorado, USA en_US
dc.identifier.clearanceno 97-0879 en_US
dc.identifier.uri http://hdl.handle.net/2014/22392
dc.description.abstract A seventh set of heavy ion single event effects (SEE) test data have been collected since the last IEEE publications. SEE trends are indicated for several functional classes of ICs. en_US
dc.format.extent 1353634 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other Heavy Ions en_US
dc.title Device See Susceptibility From Heavy Ions (1995-1996) en_US


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