Device See Susceptibility From Heavy Ions (1995-1996)

Nichols, D. K.; Coss, J. R.; Miyahira, T. F.; Schwartz, H. R.; Swift, G. M.; Koga, R.; Crain, W. R.; Crawford, K. B.; Penzin, S. H.

dc.contributor.author	Nichols, D. K.	en_US
dc.contributor.author	Coss, J. R.	en_US
dc.contributor.author	Miyahira, T. F.	en_US
dc.contributor.author	Schwartz, H. R.	en_US
dc.contributor.author	Swift, G. M.	en_US
dc.contributor.author	Koga, R.	en_US
dc.contributor.author	Crain, W. R.	en_US
dc.contributor.author	Crawford, K. B.	en_US
dc.contributor.author	Penzin, S. H.	en_US
dc.date.accessioned	2004-09-26T01:04:24Z
dc.date.available	2004-09-26T01:04:24Z
dc.date.issued	1997-07-21	en_US
dc.identifier.citation	Snowmass, Colorado, USA	en_US
dc.identifier.clearanceno	97-0879	en_US
dc.identifier.uri	http://hdl.handle.net/2014/22392
dc.description.abstract	A seventh set of heavy ion single event effects (SEE) test data have been collected since the last IEEE publications. SEE trends are indicated for several functional classes of ICs.	en_US
dc.format.extent	1353634 bytes
dc.format.mimetype	application/pdf
dc.language.iso	en_US
dc.subject.other	Heavy Ions	en_US
dc.title	Device See Susceptibility From Heavy Ions (1995-1996)	en_US