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Modification of the Surface Band-Bending of a Silicon CCD For Low-Energy Electron Detection

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dc.contributor.author Nikzad, Shouleh en_US
dc.contributor.author Smith, Aimee L.
dc.contributor.author Yu, Q.
dc.contributor.author Elliot, S. T.
dc.date.accessioned 2004-09-26
dc.date.available 2004-09-26
dc.date.issued 1996-12-02 en_US
dc.identifier.citation Boston, MA, USA en_US
dc.identifier.clearanceno 97-0484 en_US
dc.identifier.uri http://hdl.handle.net/2014/22039
dc.description.abstract In this paper, we will discuss the modification of the band bending near the CCD surface by low-temperature MBE and report the applicatio of delta-doped CCDs to low-energy electron detection. en_US
dc.format.extent 137994 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other Silicon Electron Detection en_US
dc.title Modification of the Surface Band-Bending of a Silicon CCD For Low-Energy Electron Detection en_US


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