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Quantum Well Infrared Photodetectors for Long Wavelength Infrared Applications

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dc.contributor.author Bandara, S. en_US
dc.contributor.author Hong, W. en_US
dc.contributor.author McKelvey, M. en_US
dc.contributor.author Mumolo, J. en_US
dc.contributor.author Luong, E. en_US
dc.contributor.author Liu, J. en_US
dc.contributor.author Gunapala, S. en_US
dc.date.accessioned 2004-09-25
dc.date.available 2004-09-25
dc.date.issued 1998-08-31 en_US
dc.identifier.citation SPIE Proceedings en_US
dc.identifier.citation U.S.A. en_US
dc.identifier.clearanceno 98-1548 en_US
dc.identifier.uri http://hdl.handle.net/2014/20551
dc.description.abstract Quantum Well Infrared Photodetectors (QWIPs) offer greater flexibility than usual extrinsically doped semiconductor IR detectors because the wavelength of the peak response and cutoff can be continuously tailored by varying layer thickness (well width), barrier composition (barrier height), and carrier density (well doping density). en_US
dc.format.extent 662791 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other Quantum Well Infrared Photodetectors (QWIPs) Infrared Applications semiconductor wavelength en_US
dc.title Quantum Well Infrared Photodetectors for Long Wavelength Infrared Applications en_US


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