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Microchannel Gate Temperature Analysis

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dc.contributor.author Kim, Q. en_US
dc.contributor.author Kayali, S. en_US
dc.date.accessioned 2004-09-25
dc.date.available 2004-09-25
dc.date.issued 1998-08 en_US
dc.identifier.citation Journal of Microelectronics Reliability en_US
dc.identifier.citation USA en_US
dc.identifier.clearanceno 98-1325 en_US
dc.identifier.uri http://hdl.handle.net/2014/20381
dc.description.abstract Photoemission spectra of a GaAs gate material of a metal semiconductor field effect transistor (MESFET) were analyzed to nondestructively assess the submicron-size local gate temperature. en_US
dc.format.extent 578570 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other Photoemission spectra GaAs gate material metal semiconductor field effect transistor (MESFET) temperature. en_US
dc.title Microchannel Gate Temperature Analysis en_US


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