Microchannel Gate Temperature Analysis

Kim, Q.; Kayali, S.

dc.contributor.author	Kim, Q.	en_US
dc.contributor.author	Kayali, S.	en_US
dc.date.accessioned	2004-09-25
dc.date.available	2004-09-25
dc.date.issued	1998-08	en_US
dc.identifier.citation	Journal of Microelectronics Reliability	en_US
dc.identifier.citation	USA	en_US
dc.identifier.clearanceno	98-1325	en_US
dc.identifier.uri	http://hdl.handle.net/2014/20381
dc.description.abstract	Photoemission spectra of a GaAs gate material of a metal semiconductor field effect transistor (MESFET) were analyzed to nondestructively assess the submicron-size local gate temperature.	en_US
dc.format.extent	578570 bytes
dc.format.mimetype	application/pdf
dc.language.iso	en_US
dc.subject.other	Photoemission spectra GaAs gate material metal semiconductor field effect transistor (MESFET) temperature.	en_US
dc.title	Microchannel Gate Temperature Analysis	en_US