dc.contributor.author |
Kim, Q. |
en_US |
dc.contributor.author |
Kayali, S. |
en_US |
dc.date.accessioned |
2004-09-25 |
|
dc.date.available |
2004-09-25 |
|
dc.date.issued |
1998-08 |
en_US |
dc.identifier.citation |
Journal of Microelectronics Reliability |
en_US |
dc.identifier.citation |
USA |
en_US |
dc.identifier.clearanceno |
98-1325 |
en_US |
dc.identifier.uri |
http://hdl.handle.net/2014/20381 |
|
dc.description.abstract |
Photoemission spectra of a GaAs gate material of a metal semiconductor field effect transistor (MESFET) were analyzed to nondestructively assess the submicron-size local gate temperature. |
en_US |
dc.format.extent |
578570 bytes |
|
dc.format.mimetype |
application/pdf |
|
dc.language.iso |
en_US |
|
dc.subject.other |
Photoemission spectra GaAs gate material metal semiconductor field effect transistor (MESFET) temperature. |
en_US |
dc.title |
Microchannel Gate Temperature Analysis |
en_US |