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10 - 16 mu broad-band Quantum Well Infrared Photodetector

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dc.contributor.author Bandara, S. V. en_US
dc.contributor.author Gunapala, S. D. en_US
dc.contributor.author Liu, J. K. en_US
dc.contributor.author Luong, E. M. en_US
dc.contributor.author Mumolo, J. M. en_US
dc.contributor.author Hong, W. en_US
dc.contributor.author Sengupta, D. K. en_US
dc.contributor.author McKelvey, M. J. en_US
dc.date.accessioned 2004-09-25
dc.date.available 2004-09-25
dc.date.issued 1998-08-01 en_US
dc.identifier.citation SPIE Proceedings en_US
dc.identifier.citation U.S.A. en_US
dc.identifier.clearanceno 98-1254
dc.identifier.uri http://hdl.handle.net/2014/20333
dc.description.abstract A broad-band infrared detector, sensitive over a 10 - 16 mu m spectral range, based on GaAs/A1xGa1-xAs quantum wells grown by molecular beam epitaxy, has been demonstrated. en_US
dc.format.extent 683454 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other quantum well infrared photodetector en_US
dc.title 10 - 16 mu broad-band Quantum Well Infrared Photodetector en_US


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