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A Novel, High Resolution, Non-Contact Channel Temperature Measurement Technique
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| dc.contributor.author | Kim, Q. | en_US |
| dc.contributor.author | Stark, B. | en_US |
| dc.contributor.author | Kayali, S. | en_US |
| dc.date.accessioned | 2004-09-24T20:07:15Z | |
| dc.date.available | 2004-09-24T20:07:15Z | |
| dc.date.issued | 1998-03-30 | en_US |
| dc.identifier.citation | IEEE, Environmental Reliability Physics Symposium | en_US |
| dc.identifier.citation | Reno, Nevada, USA | en_US |
| dc.identifier.clearanceno | 98-0101 | en_US |
| dc.identifier.uri | http://hdl.handle.net/2014/18966 | |
| dc.description.abstract | An in-situ optical technique based on infrared emission spectroscopy has been developed for non-contact measurement of the temperature of a hot spot in the gate channel of a GaAs metal/semiconductor field effect transistor (MESFET). | en_US |
| dc.format.extent | 419349 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.language.iso | en_US | |
| dc.subject.other | temperature optical technique infrared MESFET | en_US |
| dc.title | A Novel, High Resolution, Non-Contact Channel Temperature Measurement Technique | en_US |
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JPL TRS 1992+
JPL TRS 1992+