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A Novel, High Resolution, Non-Contact Channel Temperature Measurement Technique

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dc.contributor.author Kim, Q. en_US
dc.contributor.author Stark, B. en_US
dc.contributor.author Kayali, S. en_US
dc.date.accessioned 2004-09-24T20:07:15Z
dc.date.available 2004-09-24T20:07:15Z
dc.date.issued 1998-03-30 en_US
dc.identifier.citation IEEE, Environmental Reliability Physics Symposium en_US
dc.identifier.citation Reno, Nevada, USA en_US
dc.identifier.clearanceno 98-0101 en_US
dc.identifier.uri http://hdl.handle.net/2014/18966
dc.description.abstract An in-situ optical technique based on infrared emission spectroscopy has been developed for non-contact measurement of the temperature of a hot spot in the gate channel of a GaAs metal/semiconductor field effect transistor (MESFET). en_US
dc.format.extent 419349 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other temperature optical technique infrared MESFET en_US
dc.title A Novel, High Resolution, Non-Contact Channel Temperature Measurement Technique en_US


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