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A Novel, High Resolution, Non-Contact Channel Temperature Measurement Technique

A Novel, High Resolution, Non-Contact Channel Temperature Measurement Technique

Kim, Q.; Stark, B.; Kayali, S.
URI: http://hdl.handle.net/2014/18966
Date: 1998-03-30
Citation: IEEE, Environmental Reliability Physics Symposium
Reno, Nevada, USA

Abstract:

An in-situ optical technique based on infrared emission spectroscopy has been developed for non-contact measurement of the temperature of a hot spot in the gate channel of a GaAs metal/semiconductor field effect transistor (MESFET).

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