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Si Tight-Binding Parameters from Genetic Algorithm Fitting

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dc.contributor.author Klimeck, G. en_US
dc.contributor.author Bowen, R. en_US
dc.contributor.author Boykin, T. en_US
dc.contributor.author Salazar-Lazaro, C. en_US
dc.contributor.author Cwik, T. en_US
dc.contributor.author Stoica, A. en_US
dc.date.accessioned 2004-09-24T17:31:39Z
dc.date.available 2004-09-24T17:31:39Z
dc.date.issued 1999-10 en_US
dc.identifier.citation Superlattices and Microstructures en_US
dc.identifier.citation USA en_US
dc.identifier.clearanceno 99-1881 en_US
dc.identifier.uri http://hdl.handle.net/2014/18401
dc.description.abstract Quantum mechanical simulations of carrier transport in Si require an accurate model of the complicated Si bandstructure. Tight-binding models are an attractive method of choice since they bear the full electronic structure symmetry in them and they can discretize a realistic device on an atomic scale. en_US
dc.format.extent 1286807 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other genetic algorithm Tight-Binding Parameters en_US
dc.title Si Tight-Binding Parameters from Genetic Algorithm Fitting en_US


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