JPL Technical Report Server

The role of Energy Deposition in the Epitaxial Layer in Triggering SEGR in Power MOSFETs

Show simple item record

dc.contributor.author Selva, L. en_US
dc.contributor.author Swift, G. en_US
dc.contributor.author Taylor, W. en_US
dc.contributor.author Edmonds, L. en_US
dc.date.accessioned 2004-09-24T16:20:23Z
dc.date.available 2004-09-24T16:20:23Z
dc.date.issued 1999-07-12 en_US
dc.identifier.citation IEEE Annual Nuclear & Space Radiation Effects Conference en_US
dc.identifier.citation Norfolk, Virginia, USA en_US
dc.identifier.clearanceno 99-1182 en_US
dc.identifier.uri http://hdl.handle.net/2014/17740
dc.description.abstract In these SEGR experiments, three identical-oxide MOSFET types were irradiated with six ions of significantly different ranges. Results show the prime importance of the total energy deposited in the epitaxial layer. en_US
dc.format.extent 326528 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other energy deposition epitaxial layer SEGR in Power MOSFETs en_US
dc.title The role of Energy Deposition in the Epitaxial Layer in Triggering SEGR in Power MOSFETs en_US


Files in this item

This item appears in the following Collection(s)

Show simple item record

Search


Browse

My Account