dc.contributor.author |
Selva, L. |
en_US |
dc.contributor.author |
Swift, G. |
en_US |
dc.contributor.author |
Taylor, W. |
en_US |
dc.contributor.author |
Edmonds, L. |
en_US |
dc.date.accessioned |
2004-09-24T16:20:23Z |
|
dc.date.available |
2004-09-24T16:20:23Z |
|
dc.date.issued |
1999-07-12 |
en_US |
dc.identifier.citation |
IEEE Annual Nuclear & Space Radiation Effects Conference |
en_US |
dc.identifier.citation |
Norfolk, Virginia, USA |
en_US |
dc.identifier.clearanceno |
99-1182 |
en_US |
dc.identifier.uri |
http://hdl.handle.net/2014/17740 |
|
dc.description.abstract |
In these SEGR experiments, three identical-oxide MOSFET types were irradiated with six ions of significantly different ranges. Results show the prime importance of the total energy deposited in the epitaxial layer. |
en_US |
dc.format.extent |
326528 bytes |
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dc.format.mimetype |
application/pdf |
|
dc.language.iso |
en_US |
|
dc.subject.other |
energy deposition epitaxial layer SEGR in Power MOSFETs |
en_US |
dc.title |
The role of Energy Deposition in the Epitaxial Layer in Triggering SEGR in Power MOSFETs |
en_US |