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The role of Energy Deposition in the Epitaxial Layer in Triggering SEGR in Power MOSFETs
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| dc.contributor.author | Selva, L. | en_US |
| dc.contributor.author | Swift, G. | en_US |
| dc.contributor.author | Taylor, W. | en_US |
| dc.contributor.author | Edmonds, L. | en_US |
| dc.date.accessioned | 2004-09-24T16:20:23Z | |
| dc.date.available | 2004-09-24T16:20:23Z | |
| dc.date.issued | 1999-07-12 | en_US |
| dc.identifier.citation | IEEE Annual Nuclear & Space Radiation Effects Conference | en_US |
| dc.identifier.citation | Norfolk, Virginia, USA | en_US |
| dc.identifier.clearanceno | 99-1182 | en_US |
| dc.identifier.uri | http://hdl.handle.net/2014/17740 | |
| dc.description.abstract | In these SEGR experiments, three identical-oxide MOSFET types were irradiated with six ions of significantly different ranges. Results show the prime importance of the total energy deposited in the epitaxial layer. | en_US |
| dc.format.extent | 326528 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.language.iso | en_US | |
| dc.subject.other | energy deposition epitaxial layer SEGR in Power MOSFETs | en_US |
| dc.title | The role of Energy Deposition in the Epitaxial Layer in Triggering SEGR in Power MOSFETs | en_US |
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JPL TRS 1992+
JPL TRS 1992+