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The role of Energy Deposition in the Epitaxial Layer in Triggering SEGR in Power MOSFETs

The role of Energy Deposition in the Epitaxial Layer in Triggering SEGR in Power MOSFETs

Selva, L.; Swift, G.; Taylor, W.; Edmonds, L.
URI: http://hdl.handle.net/2014/17740
Date: 1999-07-12
Citation: IEEE Annual Nuclear & Space Radiation Effects Conference
Norfolk, Virginia, USA

Abstract:

In these SEGR experiments, three identical-oxide MOSFET types were irradiated with six ions of significantly different ranges. Results show the prime importance of the total energy deposited in the epitaxial layer.

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