JPL Technical Report Server

A 90 GHz Amplifier Assembled Using a Bump-Bonded InP-based HEMT

A 90 GHz Amplifier Assembled Using a Bump-Bonded InP-based HEMT

Samoska, L.; Pinsukanjana, P.; Gaier, T.; Smith, R.; Ksendzov, A.; Fitzsimmons, M.; Martin, S.
URI: http://hdl.handle.net/2014/17403
Date: 1999-10-17
Citation: IEEE, GaAs Integrated Circuit Symposium
Monterey, California, USA

Abstract:

We report on the performance of a novel W-band amplifier fabricated utilizing very compact bump bonds.

Show full item record

Items in TRS are protected by copyright, but are furnished with U.S. government purpose use rights.

Files in this item

Thumbnail
Name: 99-0853.pdf
Size: 204.2Kb
Format: PDF
View/Open

This item appears in the following Collection(s)

Search


Browse

My Account