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Hot-carrier reliability of transistors fabricated by a 0.25-mu m fully depleted SOI CMOS process
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Hot-carrier reliability of transistors fabricated by a 0.25-mu m fully depleted SOI CMOS process
Lieneweg, U.
;
Vandooren, A.
URI:
http://hdl.handle.net/2014/16239
Date:
2000-10-31
Citation:
2000 IEEE Microelectronics Reliability Qualifications Workshop
Glendale, California, USA
Abstract:
In the present work, the hot-carrier degradation of transistors fabricated by a 0.25- mu m FD SOI CMOS process was investigated.
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JPL TRS 1992+
JPL TRS 1992+
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