Hot-carrier reliability of transistors fabricated by a 0.25-mu m fully depleted SOI CMOS process

Lieneweg, U.; Vandooren, A.

Date: 2000-10-31

Citation: 2000 IEEE Microelectronics Reliability Qualifications Workshop
Glendale, California, USA

In the present work, the hot-carrier degradation of transistors fabricated by a 0.25- mu m FD SOI CMOS process was investigated.

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