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High responsivity CMOS imager pixel implemented in SOI technology

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dc.contributor.author Zheng, X. en_US
dc.contributor.author Wrigley, C. en_US
dc.contributor.author Yang, G. en_US
dc.contributor.author Pain, B. en_US
dc.date.accessioned 2004-09-23T21:44:12Z
dc.date.available 2004-09-23T21:44:12Z
dc.date.issued 2000-09-18 en_US
dc.identifier.citation 2000 IEEE International SOI Conference en_US
dc.identifier.citation Wakefield, Massachusetts, USA en_US
dc.identifier.clearanceno 00-2086 en_US
dc.identifier.uri http://hdl.handle.net/2014/16160
dc.description.abstract Availability of mature sub-micron CMOS technology and the advent of the new low noise active pixel sensor (APS) concept have enabled the development of low power, miniature, single-chip, CMOS digital imagers in the decade of the 1990's. en_US
dc.format.extent 235718 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other front-illuminated high responsivity CMOS high-photo response en_US
dc.title High responsivity CMOS imager pixel implemented in SOI technology en_US


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