High responsivity CMOS imager pixel implemented in SOI technology

Zheng, X.; Wrigley,  C.; Yang,  G.; Pain,  B.

dc.contributor.author	Zheng, X.	en_US
dc.contributor.author	Wrigley, C.	en_US
dc.contributor.author	Yang, G.	en_US
dc.contributor.author	Pain, B.	en_US
dc.date.accessioned	2004-09-23T21:44:12Z
dc.date.available	2004-09-23T21:44:12Z
dc.date.issued	2000-09-18	en_US
dc.identifier.citation	2000 IEEE International SOI Conference	en_US
dc.identifier.citation	Wakefield, Massachusetts, USA	en_US
dc.identifier.clearanceno	00-2086	en_US
dc.identifier.uri	http://hdl.handle.net/2014/16160
dc.description.abstract	Availability of mature sub-micron CMOS technology and the advent of the new low noise active pixel sensor (APS) concept have enabled the development of low power, miniature, single-chip, CMOS digital imagers in the decade of the 1990's.	en_US
dc.format.extent	235718 bytes
dc.format.mimetype	application/pdf
dc.language.iso	en_US
dc.subject.other	front-illuminated high responsivity CMOS high-photo response	en_US
dc.title	High responsivity CMOS imager pixel implemented in SOI technology	en_US