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Hot-carrier reliability of transistors fabricated by a 0.25-mu m fully depleted SOI CMOS process

Hot-carrier reliability of transistors fabricated by a 0.25-mu m fully depleted SOI CMOS process

Lieneweg, U.; Vandooren, A.
URI: http://hdl.handle.net/2014/15958
Date: 2000-10-31
Citation: 2000 IEEE Microelectronics Reliability Qualifications Workshop
Glendale, California, USA

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