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Electrochemical Deposition of (Bi, Sb)***sub2***Te***sub3*** for Thermoelectric Microdevices

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dc.contributor.author Herman, J. en_US
dc.contributor.author Fleurial, J-P. en_US
dc.contributor.author Snyder, G. en_US
dc.contributor.author Ryan, M. en_US
dc.contributor.author Borshchevsky, A. en_US
dc.contributor.author Huang, C-K. en_US
dc.date.accessioned 2004-09-23T18:23:08Z
dc.date.available 2004-09-23T18:23:08Z
dc.date.issued 2000-04-27 en_US
dc.identifier.citation Materials Research Society en_US
dc.identifier.citation San Francisco, CA, USA en_US
dc.identifier.clearanceno 00-0878 en_US
dc.identifier.uri http://hdl.handle.net/2014/14441
dc.description.abstract The experimental techniques developed, as well as the transport properties of some of the films and filled templates, will be presented. en_US
dc.format.extent 625217 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other Thermoelectric Microdevice Electrodeposition Energy Conversion en_US
dc.title Electrochemical Deposition of (Bi, Sb)***sub2***Te***sub3*** for Thermoelectric Microdevices en_US


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