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Modification of GaN Schottky Barrier Interfaces Probed by Ballistic-Electron-Emission Microscopy and Spectroscopy

Modification of GaN Schottky Barrier Interfaces Probed by Ballistic-Electron-Emission Microscopy and Spectroscopy

Bell, L.; Smith, R.; McDermott, B.; Gertner, E.; Pittman, R.; Pierson, R.; Sullivan, G.
URI: http://hdl.handle.net/2014/13816
Date: 2000
Citation: Applied Physics Letters
USA

Abstract:

Ballistic-electron-emission microscopy (BEEM) and spectroscopy have been used to investigate the properties of Au/GaN interfaces.

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