A high-power wideband cryogenic 200 GHz Schottky substrateless multiplier: modeling, design, and results

Schlecht, E.; Chattopadhyay,    G.; Maestrini,  A.; Pukala,    D.; Gill,    J.; Martin,    S.; Maiwald,    F.; Mehdi,    I.

dc.contributor.author	Schlecht, E.	en_US
dc.contributor.author	Chattopadhyay, G.	en_US
dc.contributor.author	Maestrini, A.	en_US
dc.contributor.author	Pukala, D.	en_US
dc.contributor.author	Gill, J.	en_US
dc.contributor.author	Martin, S.	en_US
dc.contributor.author	Maiwald, F.	en_US
dc.contributor.author	Mehdi, I.	en_US
dc.date.accessioned	2004-09-23
dc.date.available	2004-09-23
dc.date.issued	2001-10-05	en_US
dc.identifier.citation	9th International Conference on Terahertz Electronics	en_US
dc.identifier.citation	Charlottesville, VA, USA	en_US
dc.identifier.clearanceno	01-2211	en_US
dc.identifier.uri	http://hdl.handle.net/2014/13366
dc.description.abstract	A high power doubler for the frequency band 184 to 212 GHz has been fabricated and tested. The results of the continuing JPL Schottky diode physical modeling effort are discussed, including the effects of temperature and high power operation.	en_US
dc.format.extent	557987 bytes
dc.format.mimetype	application/pdf
dc.language.iso	en_US
dc.subject.other	Schettky multiplier terahertz source substrateless	en_US
dc.title	A high-power wideband cryogenic 200 GHz Schottky substrateless multiplier: modeling, design, and results	en_US