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A high-power wideband cryogenic 200 GHz Schottky substrateless multiplier: modeling, design, and results

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dc.contributor.author Schlecht, E. en_US
dc.contributor.author Chattopadhyay, G. en_US
dc.contributor.author Maestrini, A. en_US
dc.contributor.author Pukala, D. en_US
dc.contributor.author Gill, J. en_US
dc.contributor.author Martin, S. en_US
dc.contributor.author Maiwald, F. en_US
dc.contributor.author Mehdi, I. en_US
dc.date.accessioned 2004-09-23
dc.date.available 2004-09-23
dc.date.issued 2001-10-05 en_US
dc.identifier.citation 9th International Conference on Terahertz Electronics en_US
dc.identifier.citation Charlottesville, VA, USA en_US
dc.identifier.clearanceno 01-2211 en_US
dc.identifier.uri http://hdl.handle.net/2014/13366
dc.description.abstract A high power doubler for the frequency band 184 to 212 GHz has been fabricated and tested. The results of the continuing JPL Schottky diode physical modeling effort are discussed, including the effects of temperature and high power operation. en_US
dc.format.extent 557987 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other Schettky multiplier terahertz source substrateless en_US
dc.title A high-power wideband cryogenic 200 GHz Schottky substrateless multiplier: modeling, design, and results en_US


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