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A high-power wideband cryogenic 200 GHz Schottky substrateless multiplier: modeling, design, and results

A high-power wideband cryogenic 200 GHz Schottky substrateless multiplier: modeling, design, and results

Schlecht, E.; Chattopadhyay, G.; Maestrini, A.; Pukala, D.; Gill, J.; Martin, S.; Maiwald, F.; Mehdi, I.
URI: http://hdl.handle.net/2014/13366
Date: 2001-10-05
Citation: 9th International Conference on Terahertz Electronics
Charlottesville, VA, USA

Abstract:

A high power doubler for the frequency band 184 to 212 GHz has been fabricated and tested. The results of the continuing JPL Schottky diode physical modeling effort are discussed, including the effects of temperature and high power operation.

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