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Ion induced stuck bits in 1T/1C SDRAM cells
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Ion induced stuck bits in 1T/1C SDRAM cells
Edmonds, L. D.
;
Guertin, S. M.
;
Scheick, L. Z.
;
Nguyen, D.
;
Swift, G. M.
URI:
http://hdl.handle.net/2014/12968
Date:
2001-07-16
Citation:
IEEE Nuclear and Space Radiation Effects Conference
Vancouver, British Columbia, Canada
Abstract:
Radiation exposure of certain types of devices tends to stick bits, causing them to not be read out correctly after programming.
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JPL TRS 1992+
JPL TRS 1992+
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