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Ion induced stuck bits in 1T/1C SDRAM cells

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Ion induced stuck bits in 1T/1C SDRAM cells

Edmonds, L. D.; Guertin, S. M.; Scheick, L. Z.; Nguyen, D.; Swift, G. M.
URI: http://hdl.handle.net/2014/12968
Date: 2001-07-16
Citation: IEEE Nuclear and Space Radiation Effects Conference
Vancouver, British Columbia, Canada

Abstract:

Radiation exposure of certain types of devices tends to stick bits, causing them to not be read out correctly after programming.

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