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Effects of via-conductor geometry in the electromigration failure of Al:Cu wires

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dc.contributor.author Leon, R. en_US
dc.contributor.author Vu, D. en_US
dc.contributor.author Johnson, A. S. en_US
dc.contributor.author Ruiz, R. en_US
dc.contributor.author Okuno, J. en_US
dc.contributor.author Uribe, J. en_US
dc.contributor.author Hather, G. en_US
dc.contributor.author Lloyd, J. R. en_US
dc.date.accessioned 2004-09-22T23:39:26Z
dc.date.available 2004-09-22T23:39:26Z
dc.date.issued 2001-05-15 en_US
dc.identifier.citation 2nd Annual NEPP Conference - Electronic Parts, Packaging, and Radiation for Space Applications en_US
dc.identifier.citation Pasadena, CA, USA en_US
dc.identifier.clearanceno 01-1073 en_US
dc.identifier.uri http://hdl.handle.net/2014/12786
dc.description.abstract Electromigration (EM) experiments conducted using two types of via/plug to conductor alignment indicate a geometrical dependence of electromigration failure in Al:Cu conductors. The resistance vs time curves show distinctive steps when the alignment is parallel. This is explained by a successive loss of conductivity through the plug due to void formation. In the perpendicular via/conductor arrangement, resistance increases by smaller and closely spaced steps. EM experiments without vias, found that the conductor life under stress increases by at least an order of magnitude. Kinetic studies at four temperatures between 180-240 C found activation energies to be 1.0 plus or minus 0.1eV. en_US
dc.format.extent 2230086 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other Al:Cu accelerated testing electromigration activation energy en_US
dc.title Effects of via-conductor geometry in the electromigration failure of Al:Cu wires en_US


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