Heavy ion induced soft breakdown of thin gate oxides

Conley, J. F.; Suehle,  J. S.; Johnston,  A. H.; Wang,  B.; Miyahara,  T.; Vogel,  E. M.

dc.contributor.author	Conley, J. F.	en_US
dc.contributor.author	Suehle, J. S.	en_US
dc.contributor.author	Johnston, A. H.	en_US
dc.contributor.author	Wang, B.	en_US
dc.contributor.author	Miyahara, T.	en_US
dc.contributor.author	Vogel, E. M.	en_US
dc.date.accessioned	2004-09-22T22:43:35Z
dc.date.available	2004-09-22T22:43:35Z
dc.date.issued	2001-03-27	en_US
dc.identifier.citation	Nuclear and Space Radiation Effects Conference 2001	en_US
dc.identifier.citation	Vancouver, Canada	en_US
dc.identifier.clearanceno	01-0808	en_US
dc.identifier.uri	http://hdl.handle.net/2014/12580
dc.description.abstract	Heavy ion induced soft and hard breakdown are investigated in thin gate oxides as a function of LET, fluence, and voltage applied during irradiation. It is found that post-irradiation oxide conduction is well described by the Sune quantum point contact model.	en_US
dc.format.extent	737522 bytes
dc.format.mimetype	application/pdf
dc.language.iso	en_US
dc.subject.other	radiation oxides semiconductor microelectronics radiation hardness	en_US
dc.title	Heavy ion induced soft breakdown of thin gate oxides	en_US