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Heavy ion induced soft breakdown of thin gate oxides

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dc.contributor.author Conley, J. F. en_US
dc.contributor.author Suehle, J. S. en_US
dc.contributor.author Johnston, A. H. en_US
dc.contributor.author Wang, B. en_US
dc.contributor.author Miyahara, T. en_US
dc.contributor.author Vogel, E. M. en_US
dc.date.accessioned 2004-09-22T22:43:35Z
dc.date.available 2004-09-22T22:43:35Z
dc.date.issued 2001-03-27 en_US
dc.identifier.citation Nuclear and Space Radiation Effects Conference 2001 en_US
dc.identifier.citation Vancouver, Canada en_US
dc.identifier.clearanceno 01-0808 en_US
dc.identifier.uri http://hdl.handle.net/2014/12580
dc.description.abstract Heavy ion induced soft and hard breakdown are investigated in thin gate oxides as a function of LET, fluence, and voltage applied during irradiation. It is found that post-irradiation oxide conduction is well described by the Sune quantum point contact model. en_US
dc.format.extent 737522 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other radiation oxides semiconductor microelectronics radiation hardness en_US
dc.title Heavy ion induced soft breakdown of thin gate oxides en_US


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