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Transferred substrate heterojunction bipolar transistors for millimeter and submillimeter wave applications

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dc.contributor.author Fung, A. en_US
dc.contributor.author Samoska, L. en_US
dc.contributor.author O'Brien, P. en_US
dc.contributor.author Siegel, P. en_US
dc.date.accessioned 2004-09-22T21:59:58Z
dc.date.available 2004-09-22T21:59:58Z
dc.date.issued 2002-04-01 en_US
dc.identifier.citation Far-IR, Sub-MM, MM Detector Technology Workshop en_US
dc.identifier.citation Monterey, CA, USA en_US
dc.identifier.clearanceno 02-0776 en_US
dc.identifier.uri http://hdl.handle.net/2014/12009
dc.description.abstract We report on our effort to develop the world's fastest transistor with the ultimate goal of utilizing them in electronic devices for advancing the present state of RF electronic systems. en_US
dc.format.extent 2345967 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other InP HBT rf transistor III-V compound semiconductor en_US
dc.title Transferred substrate heterojunction bipolar transistors for millimeter and submillimeter wave applications en_US


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