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Low threshold interband cascade lasers operating above room temperature

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dc.contributor.author Hill, C. J. en_US
dc.contributor.author Yang, B. en_US
dc.contributor.author Yang, R. Q. en_US
dc.date.accessioned 2004-09-22T18:12:03Z
dc.date.available 2004-09-22T18:12:03Z
dc.date.issued 2003-06-16 en_US
dc.identifier.citation 11th International Conference on Narrow Gap Semiconductors en_US
dc.identifier.citation Buffalo, NY, USA en_US
dc.identifier.clearanceno 03-1538 en_US
dc.identifier.uri http://hdl.handle.net/2014/11302
dc.description.abstract Mid-IR type-II interband cascade lasers were demonstrated in pulsed mode at temperatures up to 325 K and in continuous mode up to 200 K. At 80 K, the threshold current density was 8.9 A/cm2 and a cw outpout power of ~140 mW/facet was obtained. en_US
dc.format.extent 3278396 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other interband cascade lasers GaSb molecular beam epitaxy mid-IR en_US
dc.title Low threshold interband cascade lasers operating above room temperature en_US


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