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Thermoelectric properties of Nb3SbxTe7-x compounds

Show simple item record Snyder, J. en_US Wang, S. en_US Caillat, T. en_US 2004-09-20T19:23:20Z 2004-09-20T19:23:20Z 2002-08-27 en_US
dc.identifier.citation 21st International Conference on Thermoelectrics en_US
dc.identifier.citation Long Beach, CA, USA en_US
dc.identifier.clearanceno 02-2972 en_US
dc.description.abstract Niobium antimony telluride, Nb3Sbx,Te7-x, was synthesized and tested for thermoelectric properties in the Thermoelectrics group at the Jet Propulsion Laboratory. The forty atoms per unit cell of Nb3Sb2Te5 and its varied mixture of atoms yield acomplicated structure, suggesting that Nb3Sb2Te5 and related compounds may exhibit low thermal conductivity and hence a higher ZT value. Nb3SbxTe7-x, compounds were synthesized and subsequently analyzed for their Seebeck voltage, heat conduction, and electrical resistivity. Results indicate that Nb3Sb2Te5 is a heavily doped semiconductor whose thermoelectric properties are compromised by compensating n-type and p-type carriers. Attempts to dope in favor of either carrier by varying the Sb:Te ratio yielded samples containing secondary metallic phases that dominated the transport properties of the resulting compounds. en_US
dc.format.extent 3355372 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other thermoelectric power generation segmented en_US
dc.title Thermoelectric properties of Nb3SbxTe7-x compounds en_US

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