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Effects of annealing electrodeposited bismuth Telluride films

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dc.contributor.author Snyder, J. en_US
dc.contributor.author Stoltz, N. G. en_US
dc.date.accessioned 2004-09-17T19:43:54Z
dc.date.available 2004-09-17T19:43:54Z
dc.date.issued 2002-08-27 en_US
dc.identifier.citation 21st International Conference on Thermoelectrics en_US
dc.identifier.citation Long Beach, CA, USA en_US
dc.identifier.clearanceno 02-2869 en_US
dc.identifier.uri http://hdl.handle.net/2014/10976
dc.description.abstract Thermoelectric thin films exhibit different qualities when compared with bulk materials. The goal however is to achieve thermoelectric properties of bulk materials from electrodeposited thin films. Thin films are produced by electrochemical deposition at room temperature. In order to optimize thermoelectric figure of merit proper carrierconcentration must be obtained. en_US
dc.format.extent 3389805 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other thermoelectric power generation segmented en_US
dc.title Effects of annealing electrodeposited bismuth Telluride films en_US


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