Abstract:
The XQR18V04 was evaluated for single event upset rates using proton and heavy ions. The PROM was demonstrated to be immune to latch-up, as well as to static upset in the flash memory cells, to an LET > 125 MeV/mg/cmz (effective). The PROM was also tested in a dynamic mode, which revealed three distinct error modes: Read Bit Errors, Address Errors, and a Single Event Functional Interrupt (SEW which affected the data output drivers. Saturation cross-sections, and onset thresholds, for these errorinodes were measured at the heavy ion facility at Texas A&M University, and the proton facility at UC Davis. Additional testing was performed at UC Davis and the Cobalt 60 source at McClellan Air Force Base to examine the effect to TID life as a function of power biasing. The PROM demonstrated a 100% improvement in total TID life with an 84% percent decrease in device usage.
