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The four-gate transistor

Show simple item record Mojarradi, M. M. en_US Cristoveanu, S. en_US Allibert, F. en_US France, G. en_US Blalock, B. en_US Durfrene, B. en_US 2004-09-17T18:12:56Z 2004-09-17T18:12:56Z 2002-09-23 en_US
dc.identifier.citation ESSDERC: 32th European Solid-State Device Research Conference en_US
dc.identifier.citation Firenze, Italy en_US
dc.identifier.clearanceno 02-2177 en_US
dc.description.abstract The four-gate transistor or G4-FET combines MOSFET and JFET principles in a single SOI device. Experimental results reveal that each gate can modulate the drain current. Numerical simulations are presented to clarify the mechanisms of operation. The new device shows enhanced functionality, due to the combinatorial action of the four gates, and opens rather revolutionary applications. en_US
dc.format.extent 3048971 bytes
dc.format.mimetype application/pdf
dc.language.iso en_US
dc.subject.other neuro-prosthetic devices cortical signals en_US
dc.title The four-gate transistor en_US

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